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Module Detailed Information for [MLE4207]
Academic Year : 2017/2018 Semester : 2
Correct as at 17 Jan 2018 20:00

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Module Information
Module Code :
MLE4207 IVLE
Module Title : GROWTH ASPECTS OF SEMICONDUCTORS
Module Description : Semiconductor surfaces and structures; Aspects of epitaxy in the growth of low dimensional III-V and Si based semiconductor materials; In-situ characterisation techniques and monitoring epitaxial growth by molecular beam epitaxy; Structural, kinematic theory of LEED and application of RHEED; Surface topography, composition and growth modes probed by STM, XPS and Auger spectroscopy; Layer by layer, layer-island and island growth; Problems of sensitivity and selectivity in the study of surfaces and interfaces.
Module Examinable : -
Exam Date : 02-05-2018 AM
Modular Credits : 4
Pre-requisite : MLE2101
Preclusion : EE4436 Semiconductor Process Technology
Module Workload (A-B-C-D-E)* : 2-0.5-0-1-6.5
Remarks : Nil
* A: no. of lecture hours per week
B: no. of tutorial hours per week
C: no. of laboratory hours per week
D: no. of hours for projects, assignments, fieldwork etc per week
E: no. of hours for preparatory work by a student per week


Lecture Time Table
Class TypeWeek TypeWeek DayStartEndRoom
1 LECTUREEVERY WEEKTUESDAY9001100EA-06-05,

Tutorial Time Table
Attention: The tutorial timetables could be updated from time to time. Students are advised to check regularly for the latest update on the change of tutorial timing.
Class TypeWeek TypeWeek DayStartEndRoom Iteration
1 TUTORIALEVERY WEEKWEDNESDAY9001000E3-06-12,
Not Available in Tutorial Balloting yet.
2 TUTORIALEVERY WEEKWEDNESDAY10001100E3-06-12,
Not Available in Tutorial Balloting yet.
3 TUTORIALEVERY WEEKWEDNESDAY11001200E3-06-12,
Available in Tutorial Balloting [Iteration 2].





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